【摘要】 以醇酸镓Ga(OC2H5)3作前驱体,利用溶胶．凝胶法和高温氨化法相结合,成功的合成了GaN粉末。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)、光致发光谱(PL)对粉末的结构、形貌和发光特性进行了表征。结果表明:在950℃时,可以得到纯度较高的GaN粉末且采用该工艺合成的GaN粉末粒度较均匀,生成的GaN多晶絮状颗粒为六方纤锌矿结构,室温下光致发光谱的测试结果发现了较强的402 nm处的近带边发光峰和460 nm处的蓝色发光峰。更多还原

【Abstract】 A novel but efficient method was applied to prepare Gallium nitride (GaN) powder . In this method , hexagonal gallium nitride (GaN) powders were successfully synthesized by means of a combination of Sol-gel process and high -temperature ammoniating using Ga(OC2H5)3 as a new precursor. The powder structure, surface morphology and optical properties were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM). selected area electron diffraction(SAED) and photoluminescence (PL) in this study. The results indicated that the high purity of GaN powder with a homogenous granularity could be obtained at 950癈 by this method. The multicrystalline and cotton GaN particles were in hexagonal wurtzite structure. The of PL spectra result measured at room temperature showed a strong near-band luminescence peak centered at 402 nm and a blue luminescence peak centered at 460nm.更多还原