【摘要】 采用连续离子层吸附反应(SILAR)法,分别用含有Se2-,Bi3+和Sb3+的离子溶液作为独立的阴、阳离子前驱溶液,以载玻片为衬底,在室温下沉积出致密且具有镜面金属光泽的Bi2Se3-Sb2Se3薄膜材料。为了改善薄膜样品的结晶状态,对其进行了退火处理。用AFM观察了薄膜样品的表面形貌,用XRD分析了退火前后薄膜样品的结晶状态。结果表明:薄膜样品经200℃较低温度下退火处理4 h以后,薄膜的结晶状态由无定形态转化为多晶态,其平均晶粒尺寸为30 nm～40 nm。更多还原

【Abstract】 Compound Bi2Se3-Sb2Se3 semiconductor films were grown on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at the room temperature. For the sake of ameliorating crystallization, the films were annealed. The structural characterization of films was observed and analyzed by AFM, and the crystallizations of the unannealed and annealed Bi2Se3-Sb2Se3films were analyzed by XRD. The results show that the samples of Bi2Se3-Sb2Se3films deposited by SILAR were homogeneous, compact and with metal shine like mirror, and the crystallization of films became heterocrystal from amorphous phase and the grains grew to about 30~40nm after annealed at 200℃for 4 h.更多还原