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纳米晶Cu8SnTe6的合成及半导体性能研究
Synthesis and Semiconducting Performance of Cu8SnTe6 Nanocrystalline
【摘要】 分别采用微波溶剂热法和溶剂热法合成出纳米晶Cu8SnTe6,并比较得出微波溶剂热法制备的纳米晶晶化效果好,粒径细小。通过化学分析和X射线粉末衍射(XRD)、透射电子显微镜(TEM)及X射线光电子能谱(XPS)等手段表征其组成,研究其结构。讨论了反应时间和有机溶剂填充度等反应条件对该纳米晶产率和粒径的影响,探讨了微波溶剂热法合成机理。紫外可见漫反射光谱(UV-Vis)表明,该纳米晶禁带宽度为1.77 eV,具有优良的半导体性能。
【Abstract】 The Cu8SnTe6 nanocrystalline was synthesized by the microwave solvothermal and the solvothermal techniques and we found that the nanocrystalline prepared by microwave solvothermal technique has a better crystallization effect and small grain size. Several techniques including chemical analysis, XRD, TEM, SEM and XPS were used to characterize its composition and to study its structure. Meanwhile, we discussed the effects of reaction time and organic solvent’s tamping degree on the product’s productivity and grain size, and studied the mechanism of microwave solvothermal technique. Their semiconducting property was investigated by UV-Vis, and the result indicated that this nanocrystalline is a preferable semiconductor with a band gap of 1.77 eV.
【Key words】 microwave solvothermal; solvothermal; nanocrystalline; telluride;
- 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2006年S2期
- 【分类号】TB383.1
- 【下载频次】79