【摘要】 为了计算Cd在Cd0.9Zn0.1Te(CZT)晶体中的有效扩散系数DCd与扩散激活能QCd,利用Cd在CZT晶体中的扩散特性,设计了在不同Cd压下对CZT的退火实验,推导出了晶体电阻率与Cd有效扩散系数之间的函数关系,经过计算,首次获得了在1073K,973K和873K温度时Cd原子在CZT晶体中的有效扩散系数DCd,分别为1.464×10-10cm2/s,1.085×10-11cm2/s和4.167×10-13cm2/s。将扩散数据经过拟合后得到了Cd原子在CZT晶片中有效扩散系数的表达式:2.33×exp(–2.38eV/kT)(873K~1073K),其中扩散激活能QCd为2.38eV。更多还原

【Abstract】 The Cd diffusion experiments under different Cd saturation pressures were designed to obtain the effective diffusion coefficient DCd and diffusion activation energy QCd of Cd in Cd0.9Zn0.1Te (CZT) crystal. The function relationship between the resistivities of CZT crystal and DCd was obtained. The DCd under different temperatures of 1073 K, 973 K and 873 K was calculated to be 1.464×10-10 cm2/s, 1.085×10-11 cm2/s and 4.167×10-13 cm2/s, respectively. The expression of DCd had been achieved by data fitting: 2.33×exp(–2.38 eV/kT) (873 K~1073 K). And the QCd was 2.38 eV.更多还原