节点文献
衬底温度对PLD方法生长Si(111)基ZnO薄膜结晶质量和发光特性的影响
Effects of Substrate Temperatures on the Quality and Optical Properties of ZnO Thin Films Grown on Silicon (111) by P LD
【摘要】 在不同衬底温度下用脉冲激光沉积法(PLD)在n型硅(111)衬底上生长ZnO薄膜。通过对薄膜进行的X射线衍射(XRD)、傅里叶红外吸收(FTIR)、光致发光谱(PL)、透射电子显微镜(TEM)和选区电子衍射(SAED)的测量,研究了衬底温度对PLD方法制备的ZnO薄膜的结晶质量、发光性质以及微观结构的影响。发现在600℃的衬底温度下可以得到结晶质量最佳的ZnO薄膜。随着晶粒直径的减小,出现量子限制效应,在红外吸收和光致发光中的峰位均产生了蓝移。
【Abstract】 ZnO thin films were deposited on n-Si (111) substrate at various temperatures by Pulsed Laser Deposition (PLD). X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED) are used to analyze the microstructure, composition and crystalline of the ZnO thin film deposited at various substrate temperatures. An optimal crystallized ZnO thin film was observed at the substrate temperature of 600℃. It is found that the blue-shifts were found in the FTIR and PL spectra due to the quantum confinement effect with the grain size decreasing.
- 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2006年07期
- 【分类号】O614.241
- 【被引频次】14
- 【下载频次】191