节点文献
高密度高导电性ITO靶研制
Manufacture of ITO Target with High Density and High Conductivity
【摘要】 采用化学共沉淀法掺金属Nb,Ta和P到ITO材料中可使ITO(IndiumTinOxide)靶相对密度达到97%~99%,并且靶电阻率小于3.0×10-4??cm,其质量损失率小于4.0%。采用直接掺杂法将TiO2纳米粉末掺入到纳米ITO粉末中可使ITO靶相对密度达到95%以上。当烧结温度为l500℃时,掺Nb,Ta,P的ITO靶电阻率稍小于纯ITO靶的电阻率。
【Abstract】 ITO(Indium Tin Oxide) targets are prepared by adulterating Nb, Ta and P by chemistry coprecipitation method. For the targets, the elative density is over 97% up to 99%, the resistivity and mass loss are under 3.0×10-4 ??cm and 4.0%, respectively. The relative density of ITO targets adulterating nanosized TiO2 powders by directly adulterating method is over 95%. The resistivity of ITO targets adulterating Nb and Ta is a little smaller than that of the pure ITO targets.
【基金】 国防科工委预研科学基金资助(413100202)
- 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2006年07期
- 【分类号】TB43
- 【被引频次】15
- 【下载频次】209