【摘要】 在Nb2O5含量x为0.1~1.5%的范围内,研究了Nb2O5掺杂对TiO2压敏陶瓷电性能的影响。发现x=0.7%的样品显示出最低的压敏电压(Eb=8.57V/mm)以及最高的相对介电常数2.385×104。分析认为Nb2O5掺杂的实质是Nb5+固溶于TiO2中取代Ti4+使晶粒半导化,但掺杂量受晶格畸变作用有一定限制。更多还原

【Abstract】 The effect of Nb₂O₅ doping（0.1～1.5%） on the electrical properties of TiO₂ ceramic varistor was investigated.It was found that the sample with x=0.7% exhibits the lowest varistor voltage（E_b=8.57V/mm） and the highest electrical permittivity of（2.385×10⁴）.The roles of Nb₂O₅ dopant in the TiO₂ varistor ceramics were also investigated.The results reveale that Nb⁵⁺ dissolved into TiO₂ grains to substitute Ti⁴⁺ for enhancing ceramics semiconductivity behavior,and the amount of dopant was restricted by aberrance of the crystal lattice.更多还原