【摘要】 用Bridgman法合成SnTe晶体,并用X射线衍射仪测试其显微结构,发现其晶格常数比标准值略小。以制备的晶体为原料用真空蒸镀法制备了银灰色SnTe多晶薄膜,并对薄膜的显微结构、伏安特性及表面形貌进行了研究。结果发现,薄膜上晶粒的生长有一定择优取向,其伏安特性曲线有突变点,通电后薄膜表面的原子形成了团簇。更多还原

【Abstract】 SnTe crystals have been grown using Bridgman method, and coefficients of their crystal lattice are measured though X-ray diffraction,which are smaller than the standard value. SnTe polycrystalline thin films are deposited by the vacuum evaporation method from the former SnTe crystals, and their microstructure, electrical properties, and surface appearance are studied. The results show that crystal grains on the thin films grow in some certain directions, and there is a break point on the curve of electric current and voltage, and the atom arrangement of SnTe thin films where atoms have formed some clusters after galvanizing voltage is different from the former.更多还原