【摘要】 采用反应磁控溅射法在氮气分压0.5Pa、基底温度100℃条件下,在玻璃基底上分别制备了氮化铜薄膜和铁掺杂氮化铜薄膜。XRD显示氮化铜薄膜择优(111)晶面生长,铁掺杂使氮化铜薄膜的结晶程度减弱。AFM显示铁掺杂使氮化铜薄膜粗糙度增加。铁掺杂不同程度地提高了氮化铜薄膜的沉积速率和电阻率。更多还原

【Abstract】 Copper nitride film and Fe-doped copper nitride film are deposited on glass substrates by reactive magnetron sputtering at N₂-gas partial pressure of 0.5Pa and substrate temperature of 100℃. X-ray diffraction （XRD）shows that the copper nitride film growth prefers （111） direction, and the Fe-doped copper nitride film is weak crystalline. AFM （atomic force microscopy） shows that the roughness of Fe-doped copper nitride film increases. The deposition rate and the resistivity of Fe-doped Cu₃N film increase.更多还原