【摘要】 ZnO是一种新型的Ⅱ-Ⅵ族宽带隙半导体,具有很多说异的的光电性能。但一般制备出的ZnO薄膜材料均是n型,很难实现p型的掺杂。ZnO的p型掺杂是实现其光电器件应用的关键技术,也是目前ZnO研究的关键课题。目前在p型,ZnO的掺杂理论和实验方面都有很大的进展,对此进行了详细的分析与论述,并且展望了p型ZnO薄膜制备的前景。更多还原

【Abstract】 ZnO is a new kind of novel semiconductor of theⅡ-Ⅵgroup with wide band gap and has a lot of unique photoelectric properties. But ZnO thin film is n-type material in general, so that it is hard to achieve p-type doping. P-type doping ZnO is a key technology of optic electronic applications that is a hotspot of the study. In present, great developments on the p-type doping theories and experiments of ZnO have been achieved. This paper reviews the detail and forecast the preparation trends of p-type ZnO film.更多还原