节点文献
氧化钒热敏薄膜非致冷红外探测器的等效模型
Equivalent model for vanadium oxide thin film uncooled infrared detector
【摘要】 建立了氧化钒热敏薄膜微测辐射热计的PSPICE模型,结合一个具体的CMOS读出电路给出探测器的等效电路模型,分析了探测器的电学和噪声特性,根据等效模型基于微测辐射热计电阻RD和读出电路MOS沟道宽度2个设计参数对噪声等效温差(NETD)进行了优化,优化数据表明:参数RD取值为2~11 kΩ,W取值为0.1~1.0μm时,得到的NETD值为0.133 4~0.188 5 K。
【Abstract】 A PSPICE model for vanadium oxide microbolometer is presented.On the basis of this model combining with a CMOS readout circuit,a equivalent circuit model of infrared detector is established.The electricity and noise characteristics of the model are analysed.Finally noise equivalent temperature different(NETD) is optimized based on two important design parameters;microbolometer resistance R_D and MOS channel width W.The optimized data shows that when R_D is chosen from 2 ~11 kΩ and W is chosen from 0.1~1.0 μm,NETD is realized between 0.133 4~0.188 5 K.
【Key words】 vanadium oxide; infrared detector; personal simulation program with integrated circuit emphasis(PSPICE); noise equivalent temperature difference(NETD); design optimization;
- 【文献出处】 传感器与微系统 ,Transducer and Microsystem Technologies , 编辑部邮箱 ,2006年09期
- 【分类号】TN215
- 【被引频次】5
- 【下载频次】318