【摘要】 为了突破传统的机电转换效应的宏观物理局限,为更高灵敏度、更低功耗的微/纳机电压力传感器的设计提供理论、工艺及实验依据,首次设计并利用微机械控制孔技术加工制作了基于AlAs/InxGa1-xAs/GaAs共振隧穿二极管(RTD)的GaAs基薄膜压力传感器,实现了RTD工艺与微机械加工技术的工艺集成.测试结果表明:该压力传感器的线性灵敏度达到0.1mV/kPa.更多还原

【Abstract】 In order to break through the macroscopically physical limitation of the traditional mechanical-electrical effect, provide the theory, process and experimental references for the design of higher sensitivity, lower power consumption pressure sensor, a GaAs Pressure sensor based on resonant tunneling diodes (AlAs/In_xGa_ 1-x As/GaAs RTD) is designed and processed by the control hole technology firstly, and the process integration of RTD and micro-mechanical technology is implemented. The test results show that the linear sensitivity is up to 0.1 mV/kPa.更多还原