【摘要】 在微惯性器件加工中,ICP深硅刻蚀技术主要用于梳齿结构的释放.工艺试验中的梳齿结构的最细线条尺寸为2μm,刻蚀深度为40μm,刻蚀的深宽比为20∶1,接近刻蚀设备A601E的加工极限.为了提高刻蚀精度,减小根切和底切效应,本文介绍了一种实现微结构刻蚀的ICP分步工艺的新方法,采用不同的刻蚀工艺条件,初始阶段减小底切效应,减小线条损失,刻蚀的中间阶段保证刻蚀速度,刻蚀的最终阶段减小侧向刻蚀,提高结构释放的一致性.同时通过在刻蚀结构的背面生长200nm厚Al膜对等离子体的吸附作用减小了根切效应,提高了刻蚀的精度和结构释放的一致性.更多还原

【Abstract】 In the fabrication of micro-inertial devices,inductively coupled plasma(ICP) deep silicon etching is primarily used in the release of comb structure. The feature of the thinnest line of the comb structure in process is 2 μm wide, 40 μm deep and has a 20∶1 aspect ratio, which approaches the limit of A601E etching equipment. In order to impove the dimension precision of silicon etching ,reduce the undercut effect and the footing effect,a new multi-step process for microstructure etching is present, which has different etching parameters in each step. At the beginning of ecthing process, the undercut effect and loss of lines will be reduced. To the intermediate stage of etching process, the ecthing speed should be considered to improve the uniformity. In the last stage, side etching will be controlled. A 200 nm thick aluminium film is deposited in the back of structure, which is used to reduce the footing effect by absorbing the plasma, improves the precision of lines and uniformity of structure release.更多还原