【摘要】 介绍了SOI压力传感器的制作工艺,并且通过有限元软件对传感器输出特性进行模拟,模拟结果与实际测得结果是相符的。对SOI压力传感器测量结果表明,当温度增加到220℃传感器仍然能保持很好线性。另外对SOI压力传感器和多晶硅压力传感器进行比较,发现单晶硅SOI高温压力传感器灵敏度比多晶硅高温压力传感器灵敏度有较大提高。更多还原

【Abstract】 This paper reports the fabrication processes of SOI pressure sensor.The results of measurement on SOI pressure sensors reveal that the output voltage is not changed obviously at 220℃, it is suggested that the design of high temperature SOI pressure sensor was rational.Comparing with poly-Si pressure sensor with the same layout design and process parameters,the SOI pressure sensor had a good property of high-temperature,and the sensitivity of SOI pressure sensor was much higher.更多还原