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GaAlAs半导体功率放大激光器耦合效率的研究
Study on Coupling Efficiency of Laser with GaAlAs Semiconductor Power Amplification
【摘要】 通过对波长808nm的GaAIAs/GaAs半导体功率放大激光器端面镀ZrO2减反射膜工艺过程,从理论和实验上分析了涂层特性,透射率由无膜时的69%和32.6%提高到镀膜后的90%和80%以上,提高器件的耦合效率、输出光功率和工作寿命。
【Abstract】 The properties of coatings are analyzed theoretically and experimentally throughout the deposition process of ZrO2 antireflection films on facets of GaAlAs/ GaAs laser with semiconductor power amplification for the wavelength of 808 nm . The transmissivities of cavity faces are increased from 69 % and 32. 6% without coatings to above 90% and 80% with coatings . The coupling efficiency of device , output power of laser and operating lifetime are improved.
【关键词】 半导体;
功率放大;
耦合;
减反射膜;
【Key words】 semiconductor; power amplification; coupling; antireflection films;
【Key words】 semiconductor; power amplification; coupling; antireflection films;
- 【文献出处】 长春理工大学学报 , 编辑部邮箱 ,2006年03期
- 【分类号】TN248
- 【下载频次】43