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GaAlAs半导体功率放大激光器耦合效率的研究

Study on Coupling Efficiency of Laser with GaAlAs Semiconductor Power Amplification

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【作者】 杨晓妍杨琏刘丹王征宇李松柏王安锋

【Author】 YANG Xiaoyan, YANG Lian, LIU Dan, WANG Zhengyu, LI Shongbai, WANG Anfeng ( Changchun University of Science and Technology, Changchun 130022)

【机构】 长春理工大学理学院长春理工大学理学院 长春130022长春130022

【摘要】 通过对波长808nm的GaAIAs/GaAs半导体功率放大激光器端面镀ZrO2减反射膜工艺过程,从理论和实验上分析了涂层特性,透射率由无膜时的69%和32.6%提高到镀膜后的90%和80%以上,提高器件的耦合效率、输出光功率和工作寿命。

【Abstract】 The properties of coatings are analyzed theoretically and experimentally throughout the deposition process of ZrO2 antireflection films on facets of GaAlAs/ GaAs laser with semiconductor power amplification for the wavelength of 808 nm . The transmissivities of cavity faces are increased from 69 % and 32. 6% without coatings to above 90% and 80% with coatings . The coupling efficiency of device , output power of laser and operating lifetime are improved.

  • 【分类号】TN248
  • 【下载频次】43
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