【摘要】 利用溶胶-凝胶(Sol-Gel)法在Sn的In2O3导电透明薄膜(ITO)衬底上制备了钙钛矿型Bi4Ti3O12铁电薄膜,研究了退火温度对铁电薄膜结构和性能的影响.X-射线衍射分析表明,经650℃和650℃以上温度退火的薄膜为具有层状钙钛矿型结构Bi4Ti3O12的铁电薄膜.在750℃退火20 min得到Bi4Ti3O12铁电薄膜的剩余极化强度Pr=10μC/cm2,矫顽场Ec=45 kV/cm.更多还原

【Abstract】 Bi₄Ti₃O₁₂ ferroelectric thin films with perovskite structure were prepared on Sn-doped In₂O₃（ITO） substrates by Sol-Gel method,The influence of annealing temperature on the structure of Bi₄Ti₃O₁₂ thin films has been researched.X-ray diffraction analysis proved that polycrystalline Bi₄Ti₃O₁₂ thin films can be obtained at 650 ℃ or more than 650 ℃.The test shows that the thin films at 750 ℃ for 20 min are well crystallized,its remanent polarization is 10,and coercive field is 45.更多还原