【摘要】 以10%SnO2和90%In2O3(以质量计)烧结成的ITO氧化物陶瓷为靶材,采用射频磁控溅射法在玻璃基片成功地制备出光电性能优异的ITO透明导电薄膜。研究了基片温度和氧分压溅射工艺参数对ITO薄膜的结构和光电性能的影响。实验结果表明,采用氧化铟锡陶瓷靶射频磁控溅射制备的ITO薄膜沿(222)晶面生长,薄膜紫外透射光谱的吸收截止边带随着衬底温度和氧分压的升高向短波长方向漂移。更多还原

【Abstract】 Tin-doped Indium Oxide（ITO）thin films have been deposited onto glass substrates by radio frequency（R.F.） magnetron sputtering using ITO sintered target containing 10% SnO₂ and 90% In₂O₃（in mass）.The effects of temperature of substrate and oxygen partial pressures on the electrical and optical properties of ITO thin film have been investigated.It is observed that ITO thin films show a high degree of（222） orientation.The absorption edge of ITO thin films shifted toward lower wavelength with increasing substrate temperature and oxygen partial pressures.更多还原