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掺氮碳纳米管阵列的制备及其场发射特性
Fabrication of Nitrogen-Doped Carbon Nanotube Arrays and Their Field Emission Properties
【摘要】 使用结构简单的单温炉设备,以二茂铁为碳源与催化剂,三聚氰胺为氮源在硅基底制备出了碳纳米管阵列。所得的碳纳米管为多壁结构,单根碳纳米管的平均直径为50nm,长度为15μm,有着很好的定向性。透射电子显微镜(TEM)和X射线光电子谱(XPS)分析表明所得的碳纳米管是氮掺杂的。利用场发射显微镜研究了掺氮碳纳米管阵列的平面场发射特性,相应的开启场强为1.60Vμm,场发射图像表明了其有较高的场发射点密度。
【Abstract】 Carbon nanotube (CNT) arrays have been produced on silicon substrate by an one-step route based on the pyrolysis of mixture of the ferrocene and melamine under well-chosen synthesis condition. Transmission electron microscope (TEM) and scanning electron microscope (SEM) studies showed the products were all multi-walled CNTs that are about 50nm in diameter and about 15μm in length, growing outward separately and perpendicularly to the substrate. X-ray photoelectron spectroscopy (XPS) and TEM studies revealed that the CNTs were nitrogen-doped. Field emission measurement suggested that the nitrogen-doped CNT arrays begin to emit electron at electric field of 1.60V/μm, and field emission images exhibited the high emission sites density.
- 【文献出处】 北京大学学报(自然科学版) ,Acta Scientiarum Naturalium Universitatis Pekinensis , 编辑部邮箱 ,2006年01期
- 【分类号】TB383.1
- 【被引频次】14
- 【下载频次】487