【摘要】 在考虑应变对SiGe合金能带结构参数影响的基础上,提出了一个半经验的应变Si1-xGex/Si pMOSFET反型沟道空穴迁移率模型.在该模型中,给出了迁移率随应变的变化,并且考虑了界面陷阱电荷对载流子的库仑散射作用.利用该模型对室温下空穴迁移率随应变的变化及影响空穴迁移率的因素进行了分析讨论.更多还原

【Abstract】 A semi-experienced low-field hole mobility model of a strained Si_1-xGe_x/Si pMOSFET is proposed by considering the effect of the strain on the energy-band structure of SiGe alloy.This model includes the variation of mobility with strain（Ge content） and the coulomb-scattering mechanism of interface-trapped charges on inversion carriers.Using the model,the change of the hole mobility with strain（Ge content） is simulated at room temperature,and the influence of some factors on mobility is discussed.更多还原