【摘要】 在EEHEMT1模型的基础上给出一种新的AlGaN/GaN HEMT半经验直流特性模型,考虑了栅源电压对膝点电压的影响,得到描述AlGaN/GaN HEMT器件I-V特性的方程.此模型可以应用于蓝宝石和SiC两种不同衬底AlGaN/GaN HEMT器件的I-V特性模拟.仿真结果和实验测量结果拟合误差小于3%.更多还原

【Abstract】 A new AlGaN/GaN HEMT semiempirical DC model is given.This is the first model that takes into account the effect of the gate source voltages V_gs on the knee voltage.Functions describing the DC characteristic of the AlGaN/GaN HEMT are obtained.The model can be used to model the DC characteristic of AlGaN/GaN HEMTs based on sapphire as well as SiC.The error between results simulated by the model and the measured results is less than 3%.更多还原