节点文献
磷化铟基高电子迁移率晶体管欧姆接触工艺
Ohmic Contact for InP-Based HEMTs
【摘要】 针对磷化铟(InP)基高电子迁移率晶体管(HEMT),进行了Ni/Ge/Au和Ni/Ge/Au/Ge/Ni/Au两种金属结构快速退火(10~40s)和长时间合金(10min)的实验.通过研究比较,得到了更适用于InP基HEMT器件制作的合金方法.利用Ni/Ge/Au/Ge/Ni/Au结构,在270℃下合金10min形成了典型值0.068Ω.mm的接触电阻.
【Abstract】 An ohmic contact experiment is conducted for InP-based high electron mobility transistors(HEMTs) with two different metal structures of Ni/Ge/Au and Ni/Ge/Au/Ge/Ni/Au.Comparison is made between rapid thermal annealing(10~40s) and alloying over a long time(10min).Optimized alloying conditions for the InP-based HEMT are obtained.Using the Ni/Ge/Au/Ge/Ni/Au structure,a typical contact resistance of 0.068Ω·mm is achieved by alloying at 270℃ for 10min.
【基金】 国家重点基础研究发展规划资助项目(批准号:G2002CB311901)~~
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2006年11期
- 【分类号】TN32
- 【被引频次】5
- 【下载频次】230