【摘要】 以光子晶体Fabry-Perot腔为例,提出了全电子束光刻制作光子晶体波导器件的解决方案.曝光光子晶体区域时采用较小的曝光步长,同时引入额外的邻近效应补偿本征邻近效应,从而获得高质量的掩模图形.曝光较长的输入、输出波导时,采用较大的曝光步长以提高电子束扫描速度,同时在波导的写场(write-field)过渡区引入一个锥形波导以减小写场拼接误差对光传输效率的影响.实验结果证明,这种方法既能保持小孔制作需要的高精度,也能很大程度上提高光刻效率.更多还原

【Abstract】 We present an all-e-beam lithography(EBL) process for the patterning of photonic crystal waveguides.The whole device structures are exposed in two steps.Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size(less than 10nm).With the introduction of the additional proximity effect to compensate the original proximity effect,the shape,size,and position of the holes can be well controlled.The second step is the exposure of the access waveguides at a larger step size(about 30nm) to improve the scan speed of the EBL.The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields.It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.更多还原