【摘要】 介绍了采用全剂量SI MOX SOI材料制备的0·8μmSOI CMOS器件的抗总剂量辐射特性,该特性用器件的阈值电压、漏电流和专用集成电路的静态电流与高达500krad(Si)的总剂量的关系来表征.实验结果表明pMOS器件在关态下1Mrad(Si)辐射后最大阈值电压漂移小于320mV,nMOS器件在开态下1Mrad(Si)辐射后最大阈值电压漂移小于120mV,器件在总剂量1Mrad(Si)辐射后没有观察到明显漏电,在总剂量500krad(Si)辐射下专用集成电路的静态电流小于5μA.更多还原

【Abstract】 This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology.The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad(Si).The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at 1Mrad(Si) and less than 120mV for nMOS transistors under on-gate radiation bias.No significant radiation-induced leakage current is observed in transistors to 1Mrad(Si).The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad(Si).更多还原