【摘要】 采用MOCVD生长了InGaAsP/InGaP/AlGaAs材料系分别限制异质结构(SCH)的高功率半导体激光器.对于厚度为10nm的单量子阱,通过计算量子阱增益谱优化了器件的激射波长.在室温下外延材料的荧光峰值波长为764nm,由于In原子的记忆效应(Incarry-overeffect)和As/P的替换作用使材料的InGaP/AlGaAs界面不陡峭,通过在InGaP/AlGaAs间长一层5nm的GaAsP大大改善了界面质量.器件的阈值电流从界面改善前的560mA减小到改善后的450mA,斜率效率也从0.61W/A提高到了0.7W/A,特别是单面最大输出功率已经从370mW增加到了940mW,发生灾变性光学损伤时的工作电流已经由原来的1100mA上升为1820mA.更多还原

【Abstract】 Using metal organic chemical vapor deposition,we fabricate an InGaAsP/InGaP/AlGaAs single quantum well laser with a separate confinement heterostructure.We calculate the gain spectrum with and without the effect of interband relaxation.The peak wavelength of the PL spectrum is 764nm.Due to the In carry-over effect,the interface between InGaP and AlGaAs is not abrupt.The performance of the laser diodes into which a thin GaAsP interlayer is inserted is better than those with no such interlayer.The threshold current is decreased from 560 to 450mA,the slope efficiency is increased from 0.61 to 0.7W/A,and the output power is increased from 370 to 940mW.更多还原