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掺锰硅材料的电流振荡特性
Current Oscillation Properties of Manganese-Doped-Silicon Materials
【摘要】 用高温扩散方法制备出补偿Si∶(B,Mn)材料,并研究了这种材料的电流振荡参数与光照和电场之间的关系.结果表明在一定光照和电场范围内(276~305V/cm),电阻率为104Ω.cm的材料在液氮温度下显示出电流振荡特性;在一定的电场下,电流振荡波形是固定的,不随时间变化;振荡频率随光照强度的增大而线性增大;调制系数随着光强的增强而减弱;振荡的最大值随着光照强度增大而减小,最小值随着光强增大而缓慢增大.
【Abstract】 Compensated material Si∶(B,Mn) is prepared by high temperature diffusion.The relation between the current oscillation parameters of this material and light intensity and electric field is studied.The experiment shows that:(1) In certain light intensity and electric field ranges (145~305V/cm) the material Si∶(B,Mn) with a resistivity of 104Ω·cm exhibits a current oscillation phenomenon at liquid nitrogen temperature;(2) At a certain electric field,the waveform of the current oscillation is stable and does not change with time;(3) The dependence relation between the oscillation frequency and light-intensity can be expressed by f=f0(L/L0)α where L0 is the minimum light-intensity needed to stimulate oscillation,f0 is the frequency under L0,L is the intensity of the light,and α is a coefficient that increase with electric field;(4) The modulating coefficient K(K=(I max -I min )/I max ) decreases as the light increases;(5) The maximum value of the oscillation I max decreases with the increase of the light-intensity while the minimum value of oscillation I min increases slowly.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2006年09期
- 【分类号】TN304.12
- 【被引频次】2
- 【下载频次】35