【摘要】 对沟道长度从10μm到0.13μm,栅氧化层厚度为2.5nm的HALO结构nMOS器件的直接隧穿栅电流进行了研究,得到了一个适用于短沟道HALO结构MOS器件的直接隧穿栅电流模型.随着沟道尺寸的缩短,源/漏扩展区占据沟道的比例越来越大,源漏扩展区的影响不再可以忽略不计.文中考虑了源/漏扩展区对直接隧穿栅电流的影响,给出了适用于不同HALO掺杂剂量的超薄栅(2~4nm)短沟(0.13~0.25μm)nMOS器件的半经验直接隧穿栅电流模拟表达式.更多还原

【Abstract】 The direct tunneling current of a short channel MOSFET with a HALO structure is investigated,and a new direct tunneling gate current model is obtained.It is found that the extension regions of the gate/source and gate/drain decrease the direct tunneling gate current density because the flat band voltage between the gate/source and gate/drain is higher than that of the substrate.The extension regions reduce direct tunneling current continuously as the channel length decreases.A new direct tunneling gate current model is obtained by comparing the simulation and experimental results.This model is applicable to the devices with an ultra thin gate oxide(2～4nm),a short channel(0.13～0.25μm),and a HALO structure.更多还原