【摘要】 研究了高温升华法(PVT)生长AlN体单晶的技术和材料的性质.使用陶瓷BN坩埚,加热温度约在1900℃左右,生长结果为AlN晶须或致密多晶,难以生长出较大的AlN晶粒.用钨坩埚加热生长温度达到2200℃左右时,在AlN陶瓷片和6H-SiC片上生长了直径22mm的AlN晶体,最大的晶粒尺寸长10mm、直径5mm.利用X射线粉末衍射分析了几种不同AlN样品的结构和组成.讨论了PVT法生长AlN晶体所涉及的化学热力学过程和现象.更多还原

【Abstract】 Experimental results of bulk AlN crystal growth by physical vapor transport(PVT) and its characterization are presented.A growth temperature of 1900℃ is reached by RF coil heating of the AlN source material contained in a BN crucible.Thin needle crystals and dense polycrystals are obtained in this case.It is difficult to grow large AlN crystals using a BN crucible.A growth temperature of 2200℃ is reached by RF induction heating of the source material contained with a tungsten crucible.AlN crystals in a diameter of 22mm are grown on AlN ceramic plate and 6H-SiC wafer,respectively,of which the largest grain size is 10mm in length and 5mm in diameter.The structure and component of several AlN samples are analyzed using X-ray powder diffraction.The chemical thermodynamic process and growth phenomena related to the AlN PVT growth are discussed.更多还原