【摘要】 报道了一种以InGaAs为基区的新结构InGaP/InGaAs/GaAs双异质结晶体管,获得了直流性能良好的器件.其共射直流增益β达到100,残余电压Voffset约为0.4V,膝点电压Vknee约为1V,击穿电压BVceo超过10V,器件的基极和集电极电流理想因子分别为nb=1.16,nc=1.11,可应用于低功耗、高功率领域.更多还原

【Abstract】 We fabricate a novel InGaP/InGaAs/GaAs double hetero-junction bipolar junction (DHBT) with an InGaAs base for the first time in China. Good DC performance is obtained.The common-emitter DC current gain is 100,the offset voltage approximates 0.4V,the knee voltage is about 1.0V,and the open-base breakdown voltage is over 10V.The ideality factors for the base and collector current are 1.16 and 1.11 respectively.These results indicate that the InGaP/InGaAs/GaAs DHBTs are suitable for applications in low power-dissipation and high power.更多还原