【摘要】 在蓝宝石衬底上用MOCVD技术生长的AlGaN/GaN结构上制作出0.25μm栅长的高电子迁移率功率晶体管.0.25μm栅长的单指器件测到峰值跨导为250mS/mm,特征频率为77GHz.功率器件的最大电流密度达到1.07A/mm.8GHz频率下在片测试80×10μm栅宽器件的输出功率为27.04dBm,同时功率附加效率达到26.5%.更多还原

【Abstract】 MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on sapphire substrates.A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency (f_T) of 77GHz are obtained for a 0.25μm gate-length single finger device.These power devices exhibit a maximum drain current density as high as 1.07A/mm.On-chip testing yielded a continuous-wave output power of 27.04dBm at 8GHz with an associated power-added efficiency of 26.5% for an 80×10μm device.更多还原