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用于高速电路的InP基共振隧穿二极管制作(英文)

Fabrication of an AlAs/In_0.53Ga（ 0.47）As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications

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【Author】 Ma Long 1,,Huang Yinglong2,Zhang Yang3,Wang Liangchen1, Yang Fuhua 1,2,and Zeng Yiping3(1 Research Center of Semiconductor Integration Technology,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China) (2 National Laboratory for Superlattices and Microstructures,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China) (3 Novel Semiconductor Material Laboratory,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)

【机构】中国科学院半导体研究所半导体集成技术研究中心；中国科学院半导体研究所超晶格与微结构国家重点实验室；中国科学院半导体研究所新材料实验室；中国科学院半导体研究所新材料实验室北京100083；北京100083；北京100083中国科学院半导体研究所超晶格与微结构国家重点实验室；

【摘要】在InP衬底上采用感应耦合等离子体刻蚀技术制备了高性能的AlAs/In0.53Ga0.47As/InAs共振隧穿二极管.正向偏压下PVCR=7.57,Jp=39.08kA/cm2;反向偏压下PVCR=7.93,Jp=34.56kA/cm2.在未去除测试电极和引线等寄生参数影响下,面积为5μm×5μm的RTD的阻性截止频率为18.75GHz.最后对非对称的I- V特性进行了分析讨论.更多还原

【Abstract】 A high performance AlAs/In_ 0.53Ga_ 0.47As/InAs resonant tunneling diode (RTD) on InP substrate is fabricated by inductively coupled plasma etching.This RTD has a peak-to-valley current ratio (PVCR) of 7.57 and a peak current density J_p=39.08kA/cm2 under forward bias at room temperature.Under reverse bias,the corresponding values are 7.93 and 34.56kA/cm2.A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire.The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.更多还原