【摘要】 提出了局域寿命控制下的NPT-IGBT稳态模型.通过与二维器件数值仿真比较,表明模型结果和仿真结果能较好地吻合.基于该模型,详细地分析了局域寿命区的参数对器件正向特性的影响.通过对基区空穴浓度的分析,澄清了长期以来对于最优局域低寿命区位置的不同看法,将各种结论统一起来.更多还原

【Abstract】 A static-state model of NPT-IGBTs with localized lifetime control is proposed,the results of which fit 2D simulation.With this model,the forward characteristics of localized lifetime control NPT-IGBT influenced by the parameters of localized low-lifetime region are discussed in detail.We also systematically explain why the optimized locations of low-lifetime region are different by different localized lifetime control methods in previous reports.更多还原