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HfO₂高k栅介质等效氧化层厚度的提取

Extraction of Equivalent Oxide Thickness for HfO₂ High k Gate Dielectrics

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【Author】 Chen Yong 1,,Zhao Jianming1,Han Dedong2,Kang Jinfeng2,and Han Ruqi2(1 School of Microelectronics and Solid State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China) (2 Department of Microelectronics,Peking University,Beijing 100871,China)

【机构】电子科技大学微电子与固体电子学院；北京大学微电子系；北京大学微电子系成都610054；成都610054；北京100871；

【摘要】分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).首先,根据MIS测试结构等效电路,采用双频C-V特性测试技术对漏电流和衬底电阻的影响进行修正,得出HfO2高k栅介质的准确C-V特性.其次,给出了一种利用平带电容提取高k介质EOT的方法,该方法能克服量子效应所产生的反型层或积累层电容的影响.采用该两步法提取的HfO2高k栅介质EOT与包含量子修正的Poisson方程数值模拟结果对比,误差小于5%,验证了该方法的正确性.更多还原

【Abstract】 The equivalent oxide thickness （EOT） of an HfO₂ high k dielectric is extracted in two steps.First,a dual-frequency technique is employed for the C-V curve to overcome the effects of leakage current and substrate resistance.Second,an approach using flat-band capacitance is demonstrated for extracting the EOT of a high k dielectric,without the effects of inversion or accumulation capacitance.The relative error between the EOT extracted by this two-step approach and by the quantum corrected Poisson equation is less than 5%,thus validating the approach.更多还原