【摘要】 利用对双势垒器件非平衡态电子输运性质的含时动力学模拟计算,分析了弛豫时间对这类低维器件电子输运特性的影响.结果表明,由于电子声子、电子杂质和电子缺陷等相互作用导致的弛豫时间对器件IV曲线产生很大的影响,即电流滞后类平台结构的倾斜度以及电流滞后区的宽度.更多还原

【Abstract】 Using a time-dependent quantum-kinetic simulation for the non-equilibrium electron transport properties of double-barrier devices,we have investigated and analyzed the effects of the relaxation time on electron transport properties in this kind of low dimensional structure.The results show that the relaxation time,which comes from the electron-phonon and electron-defect interactions,greatly affects the current-voltage curves,including the plateau-like gradient and hysteresis width of the current.更多还原