【摘要】 考虑Al GaN/GaN材料的自发、压电极化效应和量子效应,通过泊松方程、薛定谔方程和流体力学方程组的数值自洽求解方法,对Al GaN/GaN HEMT的二维静态模型与模拟问题进行了研究,得到了器件区域的导带图、二维电子气分布、电子温度特性、直流输出和转移特性,并对模拟结果进行了分析与讨论.更多还原

【Abstract】 AlGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schrdinger-Poisson-hydrodynamic (HD) systems.The influences of polarization charge and quantum effects are considered in this model.Then the two-dimensional conduction band and electron distribution,electron temperature characteristics,I_d versus V_d and I_d versus V_g,transfer characteristics and transconductance curves are obtained.Corresponding analysis and discussion based on the simulation results are subsequently given.更多还原