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Al组分对AlxGa1-xN/GaN异质结构中二维电子气输运性质的影响(英文)
Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures
【摘要】 在低温和强磁场下,通过磁输运测量研究了不同Al组分调制掺杂AlxGa1-xN/GaN异质结二维电子气(2DEG)的磁电阻振荡现象.观察到低Al组分异质结中的2DEG有较低的浓度和较高的迁移率.
【Abstract】 Magnetotransport properties of two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields.It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.
【关键词】 AlxGa1-xN/GaN异质结构;
二维电子气;
输运性质;
【Key words】 AlxGa1-xN/GaN heterostructure; two-dimensional electron gas; transport property;
【Key words】 AlxGa1-xN/GaN heterostructure; two-dimensional electron gas; transport property;
【基金】 国家重点基础研究发展规划(批准号:G20000683,G001CB3095);国家高技术研究发展计划(批准号:2002AA305304);国家自然科学基金(批准号:60444007,60136020,10374094);国家杰出青年基金(批准号:60325413);教育部博士点基金(批准号:20020284023)资助项目~~
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2006年02期
- 【分类号】O471
- 【被引频次】1
- 【下载频次】179