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基于硅氧化层的嵌入式传输线制造
Transmission Lines Embedded in Silicon Oxide Layers on Silicon Wafers
【摘要】 在有损耗的硅衬底上试制了传输线(微带以及共面波导),并嵌入在CMOS Cu/Si O2互连层中.对传输线的几何尺寸与其特征阻抗、损耗以及衰减因子进行了研究.结果表明嵌入在硅氧化层中的微带和共面波导可以在有损耗的硅片上低损耗地实现,为在硅片上设计微波和毫米波电路提供了必要的无源器件.
【Abstract】 Transmission lines,microstrips and coplanar waveguides,are fabricated on lossy silicon substrates embedded in CMOS Cu/SiO2 interconnect layers.The impedance,loss,and slowing factor are studied in detail as they relate to the geometric size of the transmission lines.We show that microstrips and coplanar waveguides embedded in silicon oxide can be achieved with low loss on lossy silicon wafers,providing the essential passive components for designing microwave and millimetre-wave circuits on silicon wafers.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2006年01期
- 【分类号】TN405
- 【被引频次】3
- 【下载频次】77