【摘要】 对采用MOCVD方法沉积的ZnO单晶薄膜的欧姆接触特性、光电特性进行了研究,并对比研究了射频溅射沉积Si O2抗反射膜对ZnO薄膜I-V、光电特性的影响.实验结果表明,非合金Al/ZnO金属体系与n型ZnO形成了良好的欧姆接触,溅射沉积Si O2在ZnO表面引入了载流子陷阱,影响I-V特性,延长了光响应下降时间.ZnO单晶薄膜光电导也具有时间退化现象.更多还原

【Abstract】 The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated.The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO₂ （antireflective coating） are also discussed.A nonalloyed Al/Au metallization scheme forms a good Ohmic contact on the n-type ZnO.RF sputter deposition of SiO₂ induces defects which behave as carrier traps and prolongs response time.The photoresponse of the ZnO epitaxial film deteriorates with time.更多还原