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聚合物电致发光器件中用类金刚石碳膜增强电子注入(英文)

Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices

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【作者】 李宏建闫玲玲黄伯云易丹青胡锦何英旋彭景翠

【Author】 Li Hongjian 1,3, ,Yan Lingling1,Huang Baiyun2,Yi Danqing2, Hu Jin3,He Yingxuan3,and Peng Jingcui3(1 College of Physics Science and Technology,Central South University,Changsha 410083,China) (2 College of Materials Science and Engineering,Central South University,Changsha 410083,China) (3 Department of Applied Physics,Hunan University,Changsha 410082,China)

【机构】 中南大学物理科学与技术学院湖南大学应用物理系 长沙410082中南大学材料科学与工程学院湖南大学应用物理系长沙410083长沙410082

【摘要】 用正丁胺作碳源,采用射频辉光等离子系统制备类金刚石碳膜(DLC),沉积在聚合物发光器件中的发光层(MEH-PPV)和铝(Al)阴极间作电子注入层.制备了结构为ITO/MEH-PPV/DLC/Al的不同DLC厚度的器件,测量了器件的I-V特性、亮度及效率,研究了DLC层对器件电子注入性能影响的机制.结果表明当DLC厚度小于1·0nm时,其器件有较ITO/MEH-PPV/Al高的启动电压和低的发光效率;当DLC厚度在1·0~5·0nm之间时,器件的性能随着DLC厚度增加而变好;当DLC厚度为5·0nm时,器件具有最低的启动电压与最高的发光效率;当DLC厚度继续增加时,器件的性能随着DLC厚度增加而变差.并对ITO/MEH-PPV/DLC/Al和ITO/MEH-PPV/LiF/Al的器件性能进行了比较研究.

【Abstract】 A diamond-like carbon (DLC) film is deposited as an electron injection layer between the polymer light-emitting layer(MEH-PPV) and aluminum (Al) cathode electrode in polymer electroluminescence devices (PLEDs) using a radio frequency plasma deposition system.The source material of the DLC is n-butylamine.The devices consist of indium tin oxide (ITO)/MEH-PPV/DLC/Al.Electron injection properties are investigated through I-V characteristics,and the mechanism of electron injection enhancement due to a thin DLC layer has been studied.It is found that:(1) a DLC layer thinner than 1.0nm leads to a higher turn-on voltage and decreased electroluminescent (EL) efficiency;(2) a 5.0nm DLC layer significantly enhances the electron injection and results in the lowest turn-on voltage and the highest EL efficiency;(3) DLC layer that exceeds 5.0nm results in poor device performance;and(4) EL emission can hardly be detected when the layer exceeds 10.0nm.The properties of ITO/MEH-PPV/DLC/Al and ITO/MEH-PPV/LiF/Al are investigated comparatively.

【基金】 湖南省杰出青年科学基金(批准号:03JJY1008);中国博士后科学基金(批准号:2004035083)资助项目~~
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2006年01期
  • 【分类号】TN383.1
  • 【被引频次】2
  • 【下载频次】89
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