【摘要】 阐明了化学机械抛光(CMP)工艺在集成电路制造中所发挥的关键作用,介绍了作为IC多层布线层间介质SiO2的化学机械抛光机理及其抛光液在化学机械抛光中扮演的重要角色,着重分析了影响SiO2介质化学机械抛光质量的主要因素并在此基础上提出CMP工艺的优化工艺条件以及今后SiO2介质CMP研究重点。更多还原

【Abstract】 It was demonstrated that the critical role of chemical mechanical planarization(CMP)played in the IC fabrication.Furthermore,described the CMP process fundamentals of interlevel dielectric(ILD)-silicon dioxide with IC multi,level connection in details and the effects of CMP slurry as well.Finally,stressed and analysed the factors mainly effecting silicon dioxide CMP quality and on the basis of analysed factors of above,put forward optimal process design and keystones of CMP process for the future.更多还原