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CLBO晶体化学机械抛光技术的研究
Research on the CMP of CLBO
【摘要】 介绍了硼酸锂铯(CLBO)晶体的应用前景及在化学机械抛光过程中存在的问题,简要分析了晶体在常温下开裂的机理,选用无水溶剂对晶体进行化学机械抛光以防止加工过程中晶体的潮解开裂。分析了抛光液、压力、温度、pH值参数对抛光过程的影响,通过合适配比使速率可达1.5~2μm/min,且表面质量较好。
【Abstract】 The application foreground of CLBO and the problems of it in CMP process were introduced.The mechanisms of splitting at room temperature were analyzed.Anhydrous solvent was chosen for CMP to avoid crystal craze and deliquescence.The effect of polishing solution,pressure,temperature and pH on the polishing process were analyzed,By the agency of appropriate proportion,the speedis up to 1.5~2 μm/min,and high surface quality can be gained.
【关键词】 硼酸锂铯;
潮解;
化学机械抛光;
有机溶剂;
【Key words】 CLBO; deliquescence; chemical mechanical polishing(CMP); organic solvent;
【Key words】 CLBO; deliquescence; chemical mechanical polishing(CMP); organic solvent;
- 【文献出处】 微纳电子技术 ,Micronanoelectronic Technology , 编辑部邮箱 ,2006年10期
- 【分类号】TG179
- 【被引频次】7
- 【下载频次】171