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提高Si量子点发光强度的途径
Approach for Enhancing Luminescent Intensity of Si Quantum Dots
【摘要】 探讨了提高Si量子点发光强度的可能途径。这些方法主要包括:采用高密度和小尺寸的有序Si量子点、光学微腔结构、表面钝化处理技术和稀土发光中心掺杂。
【Abstract】 The routes for enhancing luminescent intensity of Si quantum dots was discussed.These methods including the ordered Si quantum dots with high density and small size,the use of optical microcavity structure,surface passivation technologies,and doping of rare earth luminescent centers,which are very important for the fabrication of high luminescent intensity Si quantum dots.
【关键词】 Si量子点;
发光强度;
光致发光;
电致发光;
【Key words】 Si quantum dots; luminescent intensity; photoluminescence; electroluminescence;
【Key words】 Si quantum dots; luminescent intensity; photoluminescence; electroluminescence;
- 【文献出处】 微纳电子技术 ,Micronanoelectronic Technology , 编辑部邮箱 ,2006年10期
- 【分类号】O472.3
- 【被引频次】4
- 【下载频次】215