【摘要】 介绍了化学机械抛光(CMP)技术在大规模集成电路多层互连工艺[1]中的重要作用,对CMP过程和CMP的影响因素进行简单分析。总结出CMP技术在多层互联平坦化中的优势,介绍目前常用互连材料中SiO2介质及其金属材料钨和铜的化学机械抛光常用分析机理,并简单介绍了各种互联材料常用的抛光液及抛光液的组分,对抛光液作了简单的对比。针对传统CMP过程存在的问题,分析了皮带式和固定磨料的CMP技术。更多还原

【Abstract】 The importance of CMP in mutilevel interconnect was described,and the process and effect of CMP was analyzed.The advantage of CMP in mutilevel interconnect was summarized.The CMP mechanism of material in mutilevel interconnect,the material include SiO2,wiring material copper and tungsten were described.Kinds of polishing slurry used was compared,and the composition of those slurry was described.Aiming at the disadvantage of tradition CMP,the strap CMP and fixed abrasive FA-CMP was described.更多还原