【摘要】 器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。亚阈斜率、阈值电压漂移、衬底技术和场氧抗辐射能力已经成为器件按比例缩小给器件带来冲击的最主要的四个方面。综述了上述条件、高k介质/硅系统以及选择SOI材料作为衬底材料对MOS器件总剂量辐射效应的影响。更多还原

【Abstract】 The decrease of the gate oxide,the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices. The sub-threshold slope, threshold voltage shift, substrate technique and the anti-radiation ability of field oxides are the four main impacts on the device fabrication in size scaling down. The effects of above conditions, high k dielectric/Si system and the selection of SOI as the substrate materials on the total dose radiation effects were reviewed.更多还原