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GaAs微结构中共振隧穿薄膜介观压阻效应研究
Study on the Meso-Piezoresistive Effect of Resonant Tunneling Film in GaAs Micro-Structure
【摘要】 设计并利用控制孔技术加工了GaAs基微结构和基于该微结构的共振隧穿薄膜,并通过实验研究了微结构中共振隧穿薄膜的介观压阻效应,试验结果表明其介观压阻灵敏度比硅的最大压阻灵敏度高一个数量级。
【Abstract】 The GaAs micro-structure and the resonant tunneling film based on the micro-structure were designed and processed by control hole technology. And the meso-piezoresistive effects of the film were studied through experiments, more than one order higher piezoresistive sensitivity than that of silicon is demonstrated.
【关键词】 共振隧穿薄膜;
介观压阻效应;
砷化镓基微结构;
【Key words】 resonant tunneling film; meso-piezoresistive effect; GaAs micro-structure;
【Key words】 resonant tunneling film; meso-piezoresistive effect; GaAs micro-structure;
【基金】 国家自然科学基金资助(50405025,50375050)
- 【文献出处】 半导体技术 ,Semiconductor Technology , 编辑部邮箱 ,2006年09期
- 【分类号】TN42
- 【被引频次】9
- 【下载频次】82