【摘要】 简单介绍了单层增透膜的基本工作原理,并理论计算了增透膜为SiO2和Si3N4时InP/InGaAsPIN探测器的透射率。计算结果表明Si3N4的增透效果要优于SiO2,通过测试淀积有Si3N4增透膜的探测器的响应度,并和理论计算的透射率进行比较,研究了不同的淀积工艺对响应度的影响和探测器在不同应用时膜厚的设计方法。更多还原

【Abstract】 The principle of transparency - increased theory of single antireflection (AR) coating was introduced. The transmittance of InP/InGaAs PIN infrared photodetectors which deposited with SiO2 and Si3N4 respectively as the AR coating was calculated. The results show that Si3N4 is better than SiO2 as AR coating. The responsibility for the photodetector which deposited with Si3N4 AR coating was measured, combining the simulating results of transmittance, the depositing technique and de- sign method for thickness were investigated.更多还原