【摘要】 论述了反射高能电子衍射(RHEED)作为外延薄膜进行原位监测的一个重要手段以及RHEED图像与外延薄膜的表面形貌的关系,提出了以RHEED图像分析外延GaN基薄膜晶格结构的演变情况,并从衬底α-Al2O3的等离子体清洗、氮化进行了具体的分析和演算。结论指出,RHEED不仅是进行外延薄膜原位监测,而且还可以作为分析外延薄膜晶体结构演变的一个有力手段。更多还原

【Abstract】 Based on the relation to images of RHEED for situ monitoring growth of GaN-based epitaxy film and surface feature of epitaxy film, the transformation of the crystal lattice of growing surface of epitaxy film from RHEED images in different processes, such as hydrogen-nitrogen plasma cleaning and nitridation of sapphire substrate was given. The result indicated that RHEED was ad- vance for monitoring the growth of epitaxy film in situ, but also was a strongly tool for analyzing the crystal lattice transformation of epitaxy film.更多还原