【摘要】 在分析功率集成电路中闩锁效应的基础上,采取一种抗闩锁方法,即在高低压之间做一道接地的少子保护环。通过对环的电位、位置和宽度的研究,利用软件工具Tsuprem4和Medici进行模拟比较,并应用于实际版图中进行流片。这种保护结构可以将闩锁的触发电压提高一个数量级,在实际的闩锁静态测试中得到验证。更多还原

【Abstract】 Based on the analyzing of latch up issues in Power IC, a way was used to improvelatch up immunity, that is a minority carrier guarding which connects to GND between high voltagedevice and low voltage device. With the research of the voltage, location and width of the guarding,the result is compared by the software Tsuprem4 and Medici, at the same time the structure is appliedfor the layout. The triggering voltage can be improved by up to one order of magnitude. This conclu-sion is proved in practical static latch up test.更多还原