【摘要】 提出了一种低压、低耗、高响应速度和低噪声的BiCMOS电荷放大器。该放大器采用BiCMOS共源-共栅输入放大级,在实现高增益的同时大大减小了噪声,并在电路中运用电流镜解决了集成高阻值电阻的问题,从而降低了集成难度和电源电压等级。测试结果表明,放大器功耗降为230μW／ch,电源电压降低0．7V左右,等效噪声电荷(ENC)小于600电子电荷。更多还原

【Abstract】 A BiCMOS charge amplifier with low power, low consumption, fast shaping time and low noise is presented. The BiCMOS cascode input stage is of high amplification and low noise. The MOSFET current mirror in this amplifier was designed for overcoming the difficulty of integrate high value resistors in VLSI technology. The results show that supply voltage was lowered down about 0.7V, the total power consumption down to 230 μ W/ch, the ENC is less than 600 electrons.更多还原