【摘要】 在改进的电子回旋共振(ECR)等离子体增强金属有机物化学汽相沉积(ECR-PEMOCVD)装置(ESPD-U)中,以氮等离子体为氮源,三乙基镓(TEG)为镓源,在蓝宝石(α-Al2O3)衬底上生长氮化镓(GaN)薄膜。在不同的温度、氮氢流量下,分别对α-Al2O3衬底进行等离子体清洗和氮化, 并用RHEED实时监测。通过对RHEED图像的分析,得出衬底清洗和氮化的最佳条件。更多还原

【Abstract】 GaN thin films were prepared on sapphire (α-Al2O3) substrates in an improved electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system (ESPD-U) with nitrogen plasma and the triethyl gallium (TEG) as precursors, α-Al2O3 substrates were cleaned and nitrified by plasma at different temperatures and flux of nitrogen and hydrogen, by using RHEED monitoring in-situ . The best conditions of cleaning and nitriding of substrates were determined from the analysis of the RHEED images.更多还原