【摘要】 随着半导体技术的不断发展,集成电路的线宽在不断减小,对硅抛光片表面质量的要求也越来越高,传统的RAC清洗方法已不能满足其需求,因此,必须发展新的清洗方法。本文对传统的RCA清洗方法进行了简单的介绍,分析了其中的不足之处,在此基础上,对新发展的HF／O3槽式清洗法和HF／O3 单片清洗法进行了详细的说明,从而对300mm硅片清洗方法的未来发展方向进行了简单论述。更多还原

【Abstract】 With the development of semiconductor technology, the line width of IC become more and more narrow, the requirement of silicon wafer surface also become more strict. Traditional RCA cleaning could not meet this requirement, so new cleaning way must be developed. The traditional RCA cleaning for silicon wafer, analysis of the shortcoming of this cleaning method are introduced. Two new cleaning methods: HF/ O3wet bench cleaning and HF/ O3 single-wafer spin cleaning are described. The developing direction of cleaning methods for 300mm silicon wafer in the future is discussed.更多还原